Samsung today announced its latest and highest performing UFS (Universal Flash Storage) yet called the UFS 4.0. It now has received EDEC board of director approval.
The UFS 4.0 storage solution implements the newest JEDEC standard specification and uses Samsung’s Gen 7 V-NAND memory and proprietary controller with sequential read speeds of up to 4,200 MB/s and sequential write speeds of up to 2,800 MB/s.
Power efficiency has also been enhanced, delivering a sequential read speed of 6.0MB/s per mA, which is a 46% improvement over the previous generation.
BREAKING: Samsung has developed the industry's highest performing Universal Flash Storage (UFS) 4.0 storage solution, which has received JEDEC® board of director approval. What is UFS 4.0 and what does it mean for the future of storage? Read on to learn more. pic.twitter.com/4Wxdu0J2PD
— Samsung Semiconductor (@SamsungDSGlobal) May 3, 2022
Moreover, the UFS 4.0 offers a speed of up to 23.2Gbps per lane, which is double that of the previous UFS 3.1. According to Samsung, this much bandwidth is perfect for 5G smartphones requiring huge amounts of data processing, and the brand expects this technology to be adopted future in VR, AR, and automotive applications.
The new storage solution will come with a maximum dimension of 11mm x 13mm x 1mm for more effective space utilization and design convenience. It will support up to 1TB of storage as well.
According to the brand, mass production of the UFS 4.0 is planned to begin in the third quarter of this year. We expect to see this technology on the Galaxy S23 series next year.
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