Samsung Electronics has started shipping sample units of its new HBM4E high-bandwidth memory.
The new HBM4E memory features a 12-layer design and a capacity of 48GB.
According to Samsung, it can reach speeds of up to 16 Gbps and provide memory bandwidth of up to 3.6 TB/s per stack.
Samsung said the HBM4E offers more than 20% higher performance and over 30% greater capacity compared to its current HBM4 memory.
The HBM4E uses Samsung’s sixth-generation 10nm-class DRAM process and a 4nm logic base die.
The company plans to offer additional HBM4E versions in 32GB and 64GB capacities to meet different customer requirements.
Mass production of the new memory is expected to begin after customer testing and optimization are completed, with timing depending on customer schedules.
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